The global 3D NAND memory market is anticipated to grow significantly over the forecast period. 3D NAND Flash is a type of flash memory, which involves stacking memory cells on top of each other to provide a higher capacity/volume ratio in a smaller physical space. It maximizes electrical efficiency by shortening the interconnect length between cells. Samsung’s 3D V-NAND was the first ever manufactured 3D NAND memory chip. The vertically stacked cell layers make use of charge trap flash (CTF) technology which enables it to offer memory of upto 128 GB on a chip. It has twice the write performance, twice the scalability and ten times the reliability of 2D, or planar NAND, which consequently improves the performance and stability of laptops, smartphones, and tablets. 3D NAND chips are also used in Solid State Drives (SSDs) as they possess the characteristic of retaining data without power supply. The manufacturing process of 3D NAND is less complicated than that of alternative technologies, like RRAM, since it requires the same materials used to produce NAND, while FRAM, MRAM and RRAM, and others require new materials that are not well explored and understood. Additionally, they are incorporated in a wide range of consumer electronic products and enterprise applications.
Market Synopsis of 3D NAND Memory Market
Market Scenario:
3D NAND Memory is type of flash memory and non-volatile with various application. It is a three dimensional arrangement of an array on a silicon substrate. This memory came into existence in the year 2013 by Samsung. Currently this memory plays very vital role in consumer electronics product.
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Market Segmentation
- Segmentation by Type: Single-level cell (SLC), Multi-level cell (MLC) and Triple-level cell (TLC).
- Segmentation by Application: Consumer Electronics, Mass Storage, Industrial, Aerospace & Defence, Telecommunication among others.
Study Objective of 3D NAND Memory Market
- To provide detailed analysis of the market structure along with forecast of the various segments and sub-segments of the Global 3D NAND Memory Market Size
- To provide insights about factors affecting the market growth
- To analyze the 3D NAND Memory market based on various factors- price analysis, supply chain analysis, porter’s five force analysis etc.
- To provide historical and forecast revenue of the market segments and sub-segments with respect to four main geographies and their countries- North America, Europe, Asia, and Rest of the World (ROW)
- To provide country level analysis of the market with respect to the current market size and future prospective
- To provide country level analysis of the market for segment by technology, by type and sub-segments.
- To provide strategic profiling of key players in the market, comprehensively analyzing their core competencies, and drawing a competitive landscape for the market
- To track and analyze competitive developments such as joint ventures, strategic alliances, mergers and acquisitions, new product developments, and research and developments in the Global 3D NAND Memory Market.
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The reports also covers brief analysis of Geographical Region includes:
Americas
- North America
- US
- Canada
Europe
- Western Europe
- Germany
- France
- Italy
- Spain
- K
- Rest of Western Europe
- Eastern Europe
Asia– Pacific
- Asia
- China
- India
- Japan
- South Korea
- Rest of Asia
- Pacific
The Middle East & Africa
The report for Global 3D NAND Memory Market of Market Research Future comprises of extensive primary research along with the detailed analysis of qualitative as well as quantitative aspects by various industry experts, key opinion leaders to gain the deeper insight of the market and industry performance. The report gives the clear picture of current market scenario which includes historical and projected market size in terms of value and volume, technological advancement, macro economical and governing factors in the market. The report provides details information and strategies of the top key players in the industry. The report also gives a broad study of the different market segments and regions.
Key Players
Industry participants include Micron Technology Inc, Samsung Electronics Co. Ltd., Intel Corp. Ltd., SK Hynix Inc., SanDisk, and Toshiba Corp among others. Toshiba and SanDisk are planning to commence the creation of the 3D NAND by developing a new wafer fab facility. The 3D NAND chips are expected to be able to create embedded flash with enough capacity to store 1TB of data.
Industry News
- In July 2016, Toshiba is planning to start manufacturing world’s first 64 layer 3D flash memory chips by the end of year 2016
- In May 2016, Micron announced the new product launch of two 3D NAND solid state drives.
- In May 2014, Samsung announced the production of Industry’s first 32 Layer 3D NAND memory.
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